+++
title = "Nanopositioning system with force feedback for high-performance tracking and vibration control"
author = ["Thomas Dehaeze"]
draft = false
+++
Tags
: [Sensor Fusion]({{< relref "sensor_fusion" >}}), [Force Sensors]({{< relref "force_sensors" >}})
Reference
: (Fleming, 2010)
Author(s)
: Fleming, A.
Year
: 2010
Summary:
- The noise generated by a piezoelectric force sensor is much less than a capacitive sensor
- Dynamical model of a piezoelectric stack actuator and piezoelectric force sensor
- Noise of a piezoelectric force sensor
- IFF with a piezoelectric stack actuator and piezoelectric force sensor
- A force sensor is used as a displacement sensor below the frequency of the first zero
- Sensor fusion architecture with a capacitive sensor and a force sensor and using complementary filters
- Virtual sensor fusion architecture (called low-frequency bypass)
- Analog implementation of the control strategies to avoid quantization noise, finite resolution and sampling delay
## Model of a multi-layer monolithic piezoelectric stack actuator {#model-of-a-multi-layer-monolithic-piezoelectric-stack-actuator}
{{< figure src="/ox-hugo/fleming10_piezo_model.png" caption="Figure 1: Schematic of a multi-layer monolithic piezoelectric stack actuator model" >}}
The actuator experiences an internal stress in response to an applied voltage.
This stress is represented by the voltage dependent force \\(F\_a\\) and is related to free displacement by
\\[ \Delta L = \frac{F\_a}{k\_a} \\]
- \\(\Delta L\\) is the change in actuator length in [m]
- \\(k\_a\\) is the actuator stiffness in [N/m]
The developed force \\(F\_a\\) is related to the applied voltage by:
\\[ \Delta L = d\_{33} n V\_a \\]
- \\(d\_{33}\\) is the piezoelectric strain constant in [m/V]
- \\(n\\) is the number of layers
- \\(V\_a\\) is the applied voltage in [V]
Combining the two equations, we obtain:
\\[ F\_a = d\_{33} n k\_a V\_a \\]
The ratio of the developed force to applied voltage is \\(d\_{33} n k\_a\\) in [N/V].
We denote this constant by \\(g\_a\\) and:
\\[ F\_a = g\_a V\_a, \quad g\_a = d\_{33} n k\_a \\]
## Dynamics of a piezoelectric force sensor {#dynamics-of-a-piezoelectric-force-sensor}
Piezoelectric force sensors provide a high sensitivity and bandwidth with low noise at high frequencies.
If a **single wafer** of piezoelectric material is sandwiched between the actuator and platform:
\\[ D = d\_{33} T \\]
- \\(D\\) is the amount of generated charge per unit area in \\([C/m^2]\\)
- \\(T\\) is the stress in \\([N/m^2]\\)
- \\(d\_{33}\\) is the piezoelectric strain constant in \\([m/V] = [C/N]\\)
The generated charge is then
\\[ q = d\_{33} F\_s \\]
If an **n-layer** piezoelectric transducer is used as a force sensor, the generated charge is then:
\\[ q = n d\_{33} F\_s \\]
---
We can use a **charge amplifier** to measure the force \\(F\_s\\).
{{< figure src="/ox-hugo/fleming10_charge_ampl_piezo.png" caption="Figure 2: Electrical model of a piezoelectric force sensor is shown in gray. Developed charge \\(q\\) is proportional to the strain and hence the force experienced by the sensor. Op-amp charge amplifier produces an output voltage \\(V\_s\\) equal to \\(-q/C\_s\\)" >}}
The output voltage \\(V\_s\\) is equal to
\\[ V\_s = -\frac{q}{C\_s} = -\frac{n d\_{33}F\_s}{C\_s} \\]
that is, the scaling between the force and voltage is \\(-\frac{n d\_{33}F\_s}{C\_s}\ [V/N]\\) .
---
We can also use a voltage amplifier.
In that case, the generated charge is deposited on the transducer's internal capacitance.
The open-circuit voltage of a piezoelectric force sensor is:
\\[ V\_s = \frac{n d\_{33} F\_s}{C} \\]
- \\(C\\) is the transducer capacitance defined by \\(C = n \epsilon\_T A / h\\) in [F]
- \\(A\\) is the area in \\([m^2]\\)
- \\(h\\) is the layer thickness in [m]
- \\(\epsilon\_T\\) is the dielectric permittivity under a constant stress in \\([F/m]\\)
We obtain
\\[ V\_s = g\_s F\_s, \quad g\_s = \frac{n d\_{33}}{C} \\]
## Noise of a piezoelectric force sensor {#noise-of-a-piezoelectric-force-sensor}
As piezoelectric sensors have a capacitive source impedance, the sensor noise density \\(N\_{V\_s}(\omega)\\) is primarily due to current noise \\(i\_n\\) reacting the capacitive source impedance:
\\[ N\_{V\_s}(\omega) = i\_n \frac{1}{C \omega} \\]
- \\(N\_{V\_s}\\) is the measured noise in \\(V/\sqrt{\text{Hz}}\\)
- \\(i\_n\\) is the current noise in \\(A/\sqrt{\text{Hz}}\\)
- \\(C\\) is the capacitance of the piezoelectric in \\(F\\)
The current noise density of a general purpose LM833 FET-input op-amp is \\(0.5\ pA/\sqrt{\text{Hz}}\\).
The capacitance of a piezoelectric stack is typically between \\(1 \mu F\\) and \\(100 \mu F\\).
# Bibliography
Fleming, A., *Nanopositioning system with force feedback for high-performance tracking and vibration control*, IEEE/ASME Transactions on Mechatronics, *15(3)*, 433–447 (2010). http://dx.doi.org/10.1109/tmech.2009.2028422 [↩](#c823f68dd2a72b9667a61b3c046b4731)
## Backlinks {#backlinks}
- [Actuators]({{< relref "actuators" >}})
- [Force Sensors]({{< relref "force_sensors" >}})