+++ title = "Nanopositioning system with force feedback for high-performance tracking and vibration control" author = ["Thomas Dehaeze"] draft = false +++ Tags : [Sensor Fusion]({{< relref "sensor_fusion" >}}), [Force Sensors]({{< relref "force_sensors" >}}) Reference : ([Fleming 2010](#org37731c2)) Author(s) : Fleming, A. Year : 2010 ## Summary {#summary} - The noise generated by a piezoelectric force sensor is much less than a capacitive sensor - Dynamical model of a piezoelectric stack actuator and piezoelectric force sensor - Noise of a piezoelectric force sensor - IFF with a piezoelectric stack actuator and piezoelectric force sensor - A force sensor is used as a displacement sensor below the frequency of the first zero - Sensor fusion architecture with a capacitive sensor and a force sensor and using complementary filters - Virtual sensor fusion architecture (called low-frequency bypass) - Analog implementation of the control strategies to avoid quantization noise, finite resolution and sampling delay ## Model of a multi-layer monolithic piezoelectric stack actuator {#model-of-a-multi-layer-monolithic-piezoelectric-stack-actuator} {{< figure src="/ox-hugo/fleming10_piezo_model.png" caption="Figure 1: Schematic of a multi-layer monolithic piezoelectric stack actuator model" >}} The actuator experiences an internal stress in response to an applied voltage. This stress is represented by the voltage dependent force \\(F\_a\\) and is related to free displacement by \\[ \Delta L = \frac{F\_a}{k\_a} \\] - \\(\Delta L\\) is the change in actuator length in [m] - \\(k\_a\\) is the actuator stiffness in [N/m] The developed force \\(F\_a\\) is related to the applied voltage by: \\[ \Delta L = d\_{33} n V\_a \\] - \\(d\_{33}\\) is the piezoelectric strain constant in [m/V] - \\(n\\) is the number of layers - \\(V\_a\\) is the applied voltage in [V] Combining the two equations, we obtain: \\[ F\_a = d\_{33} n k\_a V\_a \\] The ratio of the developed force to applied voltage is \\(d\_{33} n k\_a\\) in [N/V]. We denote this constant by \\(g\_a\\) and: \\[ F\_a = g\_a V\_a, \quad g\_a = d\_{33} n k\_a \\] ## Dynamics of a piezoelectric force sensor {#dynamics-of-a-piezoelectric-force-sensor} Piezoelectric force sensors provide a high sensitivity and bandwidth with low noise at high frequencies. If a **single wafer** of piezoelectric material is sandwiched between the actuator and platform: \\[ D = d\_{33} T \\] - \\(D\\) is the amount of generated charge per unit area in \\([C/m^2]\\) - \\(T\\) is the stress in \\([N/m^2]\\) - \\(d\_{33}\\) is the piezoelectric strain constant in \\([m/V] = [C/N]\\) The generated charge is then \\[ q = d\_{33} F\_s \\] If an **n-layer** piezoelectric transducer is used as a force sensor, the generated charge is then: \\[ q = n d\_{33} F\_s \\] --- We can use a **charge amplifier** to measure the force \\(F\_s\\). {{< figure src="/ox-hugo/fleming10_charge_ampl_piezo.png" caption="Figure 2: Electrical model of a piezoelectric force sensor is shown in gray. Developed charge \\(q\\) is proportional to the strain and hence the force experienced by the sensor. Op-amp charge amplifier produces an output voltage \\(V\_s\\) equal to \\(-q/C\_s\\)" >}} The output voltage \\(V\_s\\) is equal to \\[ V\_s = -\frac{q}{C\_s} = -\frac{n d\_{33}F\_s}{C\_s} \\] that is, the scaling between the force and voltage is \\(-\frac{n d\_{33}F\_s}{C\_s}\ [V/N]\\) . --- We can also use a voltage amplifier. In that case, the generated charge is deposited on the transducer's internal capacitance. The open-circuit voltage of a piezoelectric force sensor is: \\[ V\_s = \frac{n d\_{33} F\_s}{C} \\] - \\(C\\) is the transducer capacitance defined by \\(C = n \epsilon\_T A / h\\) in [F] - \\(A\\) is the area in \\([m^2]\\) - \\(h\\) is the layer thickness in [m] - \\(\epsilon\_T\\) is the dielectric permittivity under a constant stress in \\([F/m]\\) We obtain \\[ V\_s = g\_s F\_s, \quad g\_s = \frac{n d\_{33}}{C} \\] ## Noise of a piezoelectric force sensor {#noise-of-a-piezoelectric-force-sensor} As piezoelectric sensors have a capacitive source impedance, the sensor noise density \\(N\_{V\_s}(\omega)\\) is primarily due to current noise \\(i\_n\\) reacting the capacitive source impedance: \\[ N\_{V\_s}(\omega) = i\_n \frac{1}{C \omega} \\] - \\(N\_{V\_s}\\) is the measured noise in \\(V/\sqrt{\text{Hz}}\\) - \\(i\_n\\) is the current noise in \\(A/\sqrt{\text{Hz}}\\) - \\(C\\) is the capacitance of the piezoelectric in \\(F\\) The current noise density of a general purpose LM833 FET-input op-amp is \\(0.5\ pA/\sqrt{\text{Hz}}\\). The capacitance of a piezoelectric stack is typically between \\(1 \mu F\\) and \\(100 \mu F\\). ## Bibliography {#bibliography} Fleming, A.J. 2010. “Nanopositioning System with Force Feedback for High-Performance Tracking and Vibration Control.” _IEEE/ASME Transactions on Mechatronics_ 15 (3):433–47. . ## Backlinks {#backlinks} - [Force Sensors]({{< relref "force_sensors" >}}) - [Piezoelectric Actuators]({{< relref "piezoelectric_actuators" >}})